1、基本信息

胡華敏，1994年出生，漢族，籍貫湖北孝感，博士，中共黨員，碩士生導師。2022年畢業于湖南師范大學，獲得物理學理學博士學位。2022年6月入職長沙理工大學材料科學與工程學院。

2、教育經歷

2017.09-2022.06，湖南師范大學物理與電子科學學院，物理學，理學博士

3、工作經歷

2022年6月-至今，長沙理工大學材料科學與工程學院

4、科研方向簡介

主要研究方向為二次離子電池、低維材料及異質結表界面物性調控的第一性原理研究。已在Laser Photonics Rev., Light-Sci. Appl., ACS Photonics, Mater. Today Nano, Appl. Surf. Sci., Chinese Chem. Lett. 等學術期刊上發表SCI論文16余篇。

5、主持的代表性科研項目

[1] 滑移鐵電2R-TMDs基范德華異質結界面勢壘調控的第一性原理研究，2024JJ6013，湖南省自然科學基金青年基金，5萬元，2024.01-2026.12

[2] 二維 MX-MoS2基范德華肖特基異質結界面勢壘調控的第一性原理研究，開放課題，1萬元，2022.01-2023.01

6、代表性論文或專利

(1) G. Zeng, Y. Zeng, H. Hu*, et al, Regulating pore structure and pseudo-graphitic phase of hard carbon anode towards enhanced sodium storage performance. Chinese Chem. Lett. 2024, 110122.

(2) H. Hu, G. Zeng* and G. Ouyang*, Theoretical design of rhombohedral-stacked MoS2-based ferroelectric tunneling junctions with ultra-high tunneling electroresistances. Phys. Chem. Chem. Phys. 2024, 26, 22549.

(3) T. Yan#, H. Hu#, J. Duan*, et al, Achieving superior sodium storage performance of sulfide heterostructures via copper-driven and electrochemical reconstruction strategy. Chem. Eng. J. 2024, 499, 155871.

(4) H. Hu and G. Ouyang*, Interface induced transition from Schottky-to-Ohmic contacts in single-walled carbon nanotube-based van der Waals Schottky heterostructures. Mater. Today Nano 2022, 20, 100267.

(5) X. Zong#, H. Hu#, G. Ouyang#, et al, Black phosphorus-based van der Waals heterostructures for mid-infrared light emission applications. Light-Sci. Appl. 2020, 9, 114.

(6) Y. Zhou#, K. He#, H. Hu#, et al, Strong Neel Ordering and Luminescence Correlation in a Two-Dimensional Antiferromagnet. Laser Photonics Rev. 2022, 16, 2100431.

(7) H. Hu and G. Ouyang*, First-principles calculations of interface engineering for 2D α-In2Se3-based van der Waals multiferroic heterojunctions. Appl. Surf. Sci. 2021, 545, 149024.

(8) H. Hu, Z. Zhang, G. Ouyang*, Transition from Schottky-to-Ohmic contacts in 1T-VSe2-based van der Waals heterojunctions: Stacking and strain effects. Appl. Surf. Sci. 2020, 517, 146168.

(9) H. Hu, D. Xu, G. Ouyang*, Interface design for the transport properties in asymmetric two-dimensional van der Waals multiferroic tunnel junctions. Physica E 2023, 145, 115501.                              

(10) H. Hu and G. Ouyang*, Interface-induced transition from Schottky-to-Ohmic contact in Sc2CO2-based multiferroic heterojunctions. Phys. Chem. Chem. Phys. 2021, 23, 827-833.

7、聯系方式

電子郵箱：hmh@csust.edu.cn

辦公室：長沙理工大學云塘校區，新能源大樓1棟

通訊地址：（郵編410114）湖南省長沙市天心區萬家麗南路二段960號